MOS tube and IGBT tube as modern electronic devices used in high frequency of new electronic devices, so in electronic circuits are often encountered is also accustomed. However, MOS tube and IGBT tube due to the shape and static parameters are similar, sometimes in the selection, judgment, use is easy to make mistakes. The reliable identification method of MOS tube and IGBT tube clears the way for selection, judgment and use!

MOS 

MOS tube is MOSFET, Chinese name metal oxide semiconductor insulated gate effect tube. Its characteristics, high input impedance, fast switching speed, good thermal stability, voltage control current and other characteristics.
 

IGBT 

IGBT insulated gate bipolar fET is a combination of MOS tube and crystal triode, MOS as the input tube and crystal triode as the output tube. So the power of the transistor is very large, so the combination of the MOS tube and the advantages of the transistor.

To sum up the two kinds of transistor, is the electronic equipment using high frequency electronic components, both in appearance and extremely similar static parameters, there are some electronic products technical monopoly, sometimes they are in the circuit model is erased, so far, they in naming and no unified standard and model system to the shape and the arrangement of pin, fundamental haphazard, become the obstacle in the process of maintenance, how to distinguish and judge become a necessary means.

MOS tube and IGBT tube discrimination

Identification of damped NPN TYPE IGBT and N-channel enhanced MOMS tubes

Damped NPN IGBT and N-channel enhanced MOMS tubes had the same gate position, the IGBT tubes had the C-pole position corresponding to the D-pole position of the MODS tube, and the IGBT tubes had the E-pole position corresponding to the S-pole position of the MODS tube, and their distinction could be determined using dynamic and static measurements.

Static measurement can judge the quality of MOS tube and IGBT tube

First, short-circuit the pins of the two pipes to discharge the static electricity. There is a PN connection between the D-pole and The S-pole of the MOS tube, and the forward guide pass is reverse cut off. Thus, Rgd = Rgs = Rds = infinite, and Rsd = thousands of euros. The resistance from G pole to C pole and E pole of IGBT tube should be infinite, that is, Rgc = Rge = infinity, and there is a damping diode between IGBT tube, so it has a one-way conductive reverse cut-off characteristic, that is, Rce = infinity, and Rec = thousands of euros. From here, only the resistance of the multimeter can be used to judge whether the pipe is good or bad, but can not distinguish which kind of pipe. If the measured resistance is small, the pipe is broken down; if the measured resistance is large, the pipe is open.

Dynamic measurements distinguish MOS tubes from IGBT tubes

Firstly, the multimeter is used to apply voltage to the gate of the pipe to establish channel for the field effect pipe. Then, the resistance values among D, S, C and E are measured. MOS tube and IGBT tube are distinguished according to the difference of resistance values.

The resistance between D, S, C and E of the two pipes is measured by the resistance barrier of the multimeter. As the channel of the field effect tube has been established, Rds = Rsd≈0, and the resistance between Rce is Rce, the on-resistance of the transistor in the amplified state, and the Rec is the on-resistance of the internal damping diode, both of which are thousands of euros. Therefore, according to the measurement, the conduction degree of the two tubes is different. The resistance value between D and S of MOS tube is much smaller than that between C and E of IGBT tube. Therefore, MOS tube and IGBT tube can be distinguished.