Field effect transistor

S (Field Effect Transistor (FET)) referred to as the MOSFET. There are two main types of (junction FET - jfets) and metal oxide semiconductor field effect tube (metal - oxide semiconductor FET, hereinafter referred to as MOS FET)


  • Tpench MOSFET

    Trench MOS has lower on-off resistance and grid leakage density, resulting in lower on-off and on-off losses and faster switching speeds. At the same time, the Trench MOS Trench is vertical, so the Trench density can be further increased, the chip size can be reduced, and the conduction resistance can be reduced.

  • Planar MOSFET

    Silicon N channel enhanced VDMOSFET is obtained by self-aligning plane technology, which reduces the conduction loss, improves the switching performance and enhances avalanche energy. The transistor can be used in various power switching circuits for system miniaturization and higher efficiency.

  • Superjunction MOSFET

    By comparing the power MOSFET between the planar structure and the trench structure, it can be found that the superjunction structure actually integrates the characteristics of the planar structure and the trench structure. It is a trench with a low impedance current path in the planar structure, so it has the characteristics of the planar structure with high pressure resistance and the trench structure with low resistance.

Product advantage

  • Low FOM(Rdson*Qg)

    We provide designers with a series of products with low switching loss (labeled C after the product name), which effectively reduce gate charge (Qg), especially the charge between gate drain (Qgd), thus reducing switching power loss during fast switching

  • High avalanche tolerance, 100% EAS tested

    Provide the Serverless service pattern. The collection and analysis of log data can be realized through simple deployment configuration. Provide professional operation and maintenance team to support the whole operation and maintenance service.

  • Antistatic ability(ESD)

    Provide a highly reliable log collection mechanism to ensure the safety of data transmission; High availability distributed architecture storage is adopted to carry out multiple redundant backup storage of data.

  • Antistatic ability(ESD)

    Provides a way to deploy on demand, charge on demand and scale flexibly to accomplish tasks efficiently and effectively with lower labor and expense costs

  • Comply with RoHS standard

    Products comply with RoHS standards.

  • Low Reverse recovery charge (Qrr)/Peak recovery current (Irm)

    Low Reverse recovery charge (Qrr)/Peak recovery current (Irm)

MOSFET The workspace

  • By the area

    This is the area where the device will be turned off and zero current will flow. Here, the device is used as a basic switch and when needed as an electrical switch.

  • Saturation region

    In this region, the drain-source current of the device will remain constant without considering the voltage increase at both ends. This occurs only once when the voltage increase between the drain and the source extreme exceeds the pinch voltage value. 

  • Linear/ohmic region

    This region is the region where the current from drain to source increases with the voltage from drain to source path. When MOSFET devices operate in this linear region, they perform the amplifier function.