特诺高压 MOSFET TNPF7N65 - MOSFET_IGBT single tube/module _DIODE_ field effect tube _MOS tube

特诺高压 MOSFET TNPF7N65

2020-12-19 10:28:29

General Description：

TNPF7N65 ，the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.

Features

Fast Switching

Low ON Resistance(Rdson!1.4 )

Low Gate Charge (Typical Data:24nC)

Low Reverse transfer capacitances(Typical:5.5pF)

100% Single Pulse avalanche energy Test